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HYB25DC512160DE-5A 参数 Datasheet PDF下载

HYB25DC512160DE-5A图片预览
型号: HYB25DC512160DE-5A
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66]
分类和应用: 时钟动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 38 页 / 2394 K
品牌: QIMONDA [ QIMONDA AG ]
 浏览型号HYB25DC512160DE-5A的Datasheet PDF文件第25页浏览型号HYB25DC512160DE-5A的Datasheet PDF文件第26页浏览型号HYB25DC512160DE-5A的Datasheet PDF文件第27页浏览型号HYB25DC512160DE-5A的Datasheet PDF文件第28页浏览型号HYB25DC512160DE-5A的Datasheet PDF文件第30页浏览型号HYB25DC512160DE-5A的Datasheet PDF文件第31页浏览型号HYB25DC512160DE-5A的Datasheet PDF文件第32页浏览型号HYB25DC512160DE-5A的Datasheet PDF文件第33页  
Internet Data Sheet  
HY[B/I]25DC512[80/16]0D[E/F](L)  
512-Mbit Double-Data-Rate SDRAM  
Parameter  
Symbol –4  
DDR500B  
–5/ –5A  
–6  
Unit Note/ Test  
Condition 1)  
DDR400A/B  
DDR333B  
Min.  
Max.  
Min.  
Max. Min.  
Max.  
2)3)4)5)  
Read postamble  
tRPST  
0.40  
8
0.60  
0.40  
10  
0.60  
0.40  
12  
0.60  
tCK  
2)3)4)5)  
Active bank A to Active bank B tRRD  
ns  
command  
2)3)4)5)  
Write preamble  
tWPRE  
Max.  
Max.  
Max.  
ns  
(0.25 ×  
(0.25 ×  
(0.25 ×  
t
CK, 1.5  
t
CK, 1.5  
tCK, 1.5  
ns)  
ns)  
ns)  
2)3)4)5)10)  
Write preamble setup time  
Write postamble  
tWPRES  
tWPST  
tWR  
0
0
0
ns  
2)3)4)5)11)  
0.40  
15  
2
0.60  
0.40  
15  
2
0.60  
0.40  
15  
1
0.60  
tCK  
2)3)4)5)  
Write recovery time  
ns  
2)3)4)5)  
Internal write to read  
command delay  
tWTR  
tCK  
2)3)4)5)  
Exit self-refresh to non-read tXSNR  
command  
75  
75  
75  
ns  
2)3)4)5)  
Exit self-refresh to read  
command  
tXSRD  
200  
200  
200  
tCK  
1) 0 °C TA 70 °C; VDD = VDDQ = 2.5 V ± 0.2 V  
2) Input slew rate 1 V/ns.  
3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference level for signals  
other than CK/CK, is VREF. CK/CK slew rate are 1.0 V/ns.  
4) Inputs are not recognized as valid until VREF stabilizes.  
5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is VTT.  
6) For each of the terms, if not already an integer, round to the next highest integer. tCK is equal to the actual system clock cycle time.  
7) tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred to a specific  
voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).  
8) Fast slew rate 1.0 V/ns , slow slew rate 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ns, measured  
between VIH.AC and VIL.AC  
.
9) These parameters guarantee device timing, but they are not necessarily tested on each device.  
10) The specific requirement is that DQS be valid (HIGH,LOW, or some point on a valid transition) on or before this CK edge. A valid transition  
is defined as monotonic and meeting the input slew rate specificationsof the device. When no writes were previously in progress on the  
bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW at this time, depending  
on tDQSS  
.
11) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but system  
performance (bus turnaround) degrades accordingly.  
Rev. 1.10, 2008-05  
29  
06212007-08MW-K87L  
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