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HYB25D256400BTL-6 参数 Datasheet PDF下载

HYB25D256400BTL-6图片预览
型号: HYB25D256400BTL-6
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX4, 0.7ns, CMOS, PDSO66]
分类和应用: 时钟动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 83 页 / 3071 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB25D256[400/800/160]B[T/C](L)  
256-Mbit Double Data Rate SDRAM  
Electrical Characteristics  
Table 14  
Electrical Characteristics and DC Operating Conditions  
Parameter  
Symbol  
Values  
Typ.  
Unit Note/Test Condition 1)  
Min.  
2.3  
2.5  
2.3  
2.5  
0
Max.  
2.7  
2.7  
2.7  
2.7  
0
Device Supply Voltage  
Device Supply Voltage  
Output Supply Voltage  
Output Supply Voltage  
VDD  
2.5  
2.6  
2.5  
2.6  
V
V
V
V
V
fCK 166 MHz  
CK > 166 MHz 2)  
fCK 166 MHz 3)  
CK > 166 MHz 2)3)  
VDD  
f
VDDQ  
VDDQ  
f
Supply Voltage, I/O Supply VSS,  
Voltage  
VSSQ  
VREF  
VTT  
4)  
5)  
Input Reference Voltage  
0.49 × VDDQ 0.5 × VDDQ 0.51 × VDDQ  
V
I/O Termination Voltage  
(System)  
V
REF – 0.04  
V
REF + 0.04 V  
8)  
8)  
8)  
Input High (Logic1) Voltage VIH(DC)  
Input Low (Logic0) Voltage VIL(DC)  
V
REF + 0.15  
V
V
V
DDQ + 0.3  
V
–0.3  
REF – 0.15 V  
Input Voltage Level,  
CK and CK Inputs  
VIN(DC) –0.3  
DDQ + 0.3  
DDQ + 0.6  
V
8)6)  
7)  
Input Differential Voltage, VID(DC) 0.36  
CK and CK Inputs  
V
V
VI-Matching Pull-up  
Current to Pull-down  
Current  
VIRatio  
0.71  
–2  
1.4  
2
Input Leakage Current  
II  
µA Any input 0 V VIN VDD;  
All other pins not under test  
= 0 V 8)9)  
Output Leakage Current  
IOZ  
IOH  
IOL  
–5  
5
µA DQs are disabled;  
0 V VOUT VDDQ  
Output High Current,  
Normal Strength Driver  
–16.2  
mA  
V
OUT = 1.95 V  
Output Low  
16.2  
mA  
V
OUT = 0.35 V  
Current, Normal Strength  
Driver  
1) 0 °C TA 70 °C; VDDQ = 2.5 V ± 0.2 V, VDD = +2.5 V ± 0.2 V (DDR333); VDDQ = 2.6 V ± 0.1 V, VDD = +2.6 V ± 0.1 V  
(DDR400);  
2) DDR400 conditions apply for all clock frequencies above 166 MHz  
3) Under all conditions, VDDQ must be less than or equal to VDD  
4) Peak to peak AC noise on VREF may not exceed ± 2% VREF (DC). VREF is also expected to track noise variations in VDDQ  
5) VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal  
to VREF, and must track variations in the DC level of VREF  
.
.
.
6) VID is the magnitude of the difference between the input level on CK and the input level on CK.  
7) The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire  
temperature and voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the  
maximum difference between pull-up and pull-down drivers due to process variation.  
8) Inputs are not recognized as valid until VREF stabilizes.  
9) Values are shown per component  
Data Sheet  
55  
Rev. 1.21, 2004-07  
02102004-TSR1-4ZWW  
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