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HYB25D256400BTL-6 参数 Datasheet PDF下载

HYB25D256400BTL-6图片预览
型号: HYB25D256400BTL-6
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX4, 0.7ns, CMOS, PDSO66]
分类和应用: 时钟动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 83 页 / 3071 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB25D256[400/800/160]B[T/C](L)  
256-Mbit Double Data Rate SDRAM  
Functional Description  
3.6  
Simplified State Diagram  
Power  
Applied  
Power  
On  
Self  
Refresh  
Precharge  
PREALL  
REFS  
REFSX  
MRS  
EMRS  
Auto  
Refresh  
MRS  
REFA  
Idle  
CKEL  
CKEH  
Active  
Power  
Down  
ACT  
Precharge  
Power  
Down  
CKEH  
CKEL  
Write  
Burst Stop  
Row  
Active  
Read  
Write A  
Read A  
Write  
Read  
Read  
Read A  
Write A  
Read  
A
PRE  
Write  
A
Read  
A
PRE  
PRE  
Precharge  
PREALL  
PRE  
Automatic Sequence  
Command Sequence  
PREALL = Precharge All Banks  
MRS = Mode Register Set  
EMRS = Extended Mode Register Set  
REFS = Enter Self Refresh  
REFSX = Exit Self Refresh  
REFA = Auto Refresh  
CKEL = Enter Power Down  
CKEH = Exit Power Down  
ACT = Active  
Write A = Write with Autoprecharge  
Read A = Read with Autoprecharge  
PRE = Precharge  
Figure 32 Simplified State Diagram  
Data Sheet  
53  
Rev. 1.21, 2004-07  
02102004-TSR1-4ZWW  
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