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HYB25D256400BCL-7 参数 Datasheet PDF下载

HYB25D256400BCL-7图片预览
型号: HYB25D256400BCL-7
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 64MX4, 0.75ns, CMOS, PBGA60]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 83 页 / 3071 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB25D256[400/800/160]B[T/C](L)  
256-Mbit Double Data Rate SDRAM  
Functional Description  
Notes:  
1. For a burst length of two, A1-Ai selects the two-data-element block; A0 selects the first access within the block.  
2. For a burst length of four, A2-Ai selects the four-data-element block; A0-A1 selects the first access within the  
block.  
3. For a burst length of eight, A3-Ai selects the eight-data- element block; A0-A2 selects the first access within  
the block.  
4. Whenever a boundary of the block is reached within a given sequence above, the following access wraps  
within the block.  
3.2.3  
Read Latency  
The Read latency, or CAS latency, is the delay, in clock cycles, between the registration of a Read command and  
the availability of the first burst of output data. The latency can be programmed 2, 2.5 or 3 clocks. CAS latency of  
1.5 is an optional feature on this device. If a Read command is registered at clock edge n, and the latency is m  
clocks, the data is available nominally coincident with clock edge n + m (see Figure 6). Reserved states should  
not be used as unknown operation or incompatibility with future versions may result.  
Data Sheet  
18  
Rev. 1.21, 2004-07  
02102004-TSR1-4ZWW  
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