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HYB18T512400BF-5 参数 Datasheet PDF下载

HYB18T512400BF-5图片预览
型号: HYB18T512400BF-5
PDF下载: 下载PDF文件 查看货源
内容描述: 512兆位双数据速率 - 双SDRAM的 [512-Mbit Double-Data-Rate-Two SDRAM]
分类和应用: 内存集成电路动态存储器双倍数据速率
文件页数/大小: 57 页 / 2915 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB18T512xxxBF–[2.5…5]  
512-Mbit Double-Data-Rate-Two SDRAM  
6
Specifications and Conditions  
Table 34  
IDD Measurement Conditions  
Parameter  
Symbol Note  
1)2)3)4)  
Operating Current - One bank Active - Precharge  
CK = tCK(IDD), tRC = tRC(IDD), tRAS = tRAS.MIN(IDD), CKE is HIGH, CS is HIGH between valid  
IDD0  
5)6)  
t
commands. Address and control inputs are switching; Databus inputs are switching.  
Operating Current - One bank Active - Read - Precharge  
IDD1  
I
OUT = 0 mA, BL = 4, tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRAS.MIN(IDD), tRCD = tRCD(IDD), AL = 0, CL =  
CL(IDD); CKE is HIGH, CS is HIGH between valid commands. Address and control inputs are  
switching; Databus inputs are switching.  
Precharge Power-Down Current  
IDD2P  
All banks idle; CKE is LOW; tCK = tCK(IDD);Other control and address inputs are stable; Data bus  
inputs are floating.  
Precharge Standby Current  
IDD2N  
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK(IDD); Other control and address inputs are  
switching, Data bus inputs are switching.  
Precharge Quiet Standby Current  
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK(IDD); Other control and address inputs are  
stable, Data bus inputs are floating.  
IDD2Q  
IDD3P(0)  
IDD3P(1)  
IDD3N  
Active Power-Down Current  
All banks open; tCK = tCK(IDD), CKE is LOW; Other control and address inputs are stable; Data bus  
inputs are floating. MRS A12 bit is set to “0” (Fast Power-down Exit).  
Active Power-Down Current  
All banks open; tCK = tCK(IDD), CKE is LOW; Other control and address inputs are stable, Data bus  
inputs are floating. MRS A12 bit is set to 1 (Slow Power-down Exit);  
Active Standby Current  
All banks open; tCK = tCK(IDD); tRAS = tRAS.MAX(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between  
valid commands. Address inputs are switching; Data Bus inputs are switching;  
Operating Current  
IDD4R  
Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CL(IDD); tCK = tCK(IDD)  
;
t
RAS = tRAS.MAX.(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands. Address  
inputs are switching; Data Bus inputs are switching; IOUT = 0 mA.  
Operating Current  
IDD4W  
Burst Write: All banks open; Continuous burst writes; BL = 4; AL = 0, CL = CL(IDD); tCK = tCK(IDD)  
;
t
RAS = tRAS.MAX(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands. Address  
inputs are switching; Data Bus inputs are switching;  
Burst Refresh Current  
IDD5B  
t
CK = tCK(IDD), Refresh command every tRFC = tRFC(IDD) interval, CKE is HIGH, CS is HIGH between  
valid commands, Other control and address inputs are switching, Data bus inputs are switching.  
Distributed Refresh Current  
IDD5D  
t
CK = tCK(IDD), Refresh command every tREFI = 7.8 µs interval, CKE is LOW and CS is HIGH  
between valid commands, Other control and address inputs are switching, Data bus inputs are  
switching.  
Internet Data Sheet  
33  
Rev. 1.05, 2007-01  
03292006-YBYM-WG0Z  
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