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HYB18TC1G800BF-5 参数 Datasheet PDF下载

HYB18TC1G800BF-5图片预览
型号: HYB18TC1G800BF-5
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位DDR2 SDRAM [1-Gbit DDR2 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 54 页 / 3010 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB18TC1G[80/16]0AF  
1-Gbit DDR2 SDRAM  
FIGURE 4  
Differential DC and AC Input and Output Logic Levels Diagram  
VDDQ  
VTR  
VCP  
Crossing Point  
VID  
VIX or VOX  
VSSQ  
SSTL18_3  
5.4  
Output Buffer Characteristics  
This chapter describes the Output Buffer Characteristics.  
TABLE 28  
SSTL_18 Output DC Current Drive  
Symbol  
Parameter  
SSTL_18  
Unit  
Note  
1)2)  
IOH  
IOL  
Output Minimum Source DC Current  
Output Minimum Sink DC Current  
–13.4  
13.4  
mA  
mA  
2)3)  
1)  
VDDQ = 1.7 V; VOUT = 1.42 V. (VOUTVDDQ) / IOH must be less than 21 Ohm for values of VOUT between VDDQ and VDDQ – 280 mV.  
2) The values of IOH(dc) and IOL(dc) are based on the conditions given in 1) and 3). They are used to test drive current capability to ensure VIH.MIN  
plus a noise margin and VIL.MAX minus a noise margin are delivered to an SSTL_18 receiver. The actual current values are derived by  
shifting the desired driver operating points along 21 Ohm load line to define a convenient current for measurement.  
.
3)  
VDDQ = 1.7 V; VOUT  
=
280 mV. VOUT / IOL must be less than 21 Ohm for values of VOUT between 0 V and 280 mV.  
TABLE 29  
SSTL_18 Output AC Test Conditions  
Symbol  
Parameter  
SSTL_18  
Unit  
Note  
1)  
VOH  
VOL  
Minimum Required Output Pull-up  
VTT + 0.603  
VTT – 0.603  
0.5 × VDDQ  
V
V
V
1)  
Maximum Required Output Pull-down  
Output Timing Measurement Reference Level  
VOTR  
1) SSTL_18 test load for VOH and VOL is different from the referenced load. The SSTL_18 test load has a 20 Ohm series resistor additionally  
to the 25 Ohm termination resistor into VTT. The SSTL_18 definition assumes that ± 335 mV must be developed across the effectively 25  
Ohm termination resistor (13.4 mA x 25 Ohm = 335 mV). With an additional series resistor of 20 Ohm this translates into a minimum  
requirement of 603 mV swing relative to VTT, at the ouput device (13.4 mA x 45 Ohm = 603 mV).  
Rev. 1.11, 2006-09  
27  
03292006-PJAE-UQLG  
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