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HYB18TC1G800BF-5 参数 Datasheet PDF下载

HYB18TC1G800BF-5图片预览
型号: HYB18TC1G800BF-5
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位DDR2 SDRAM [1-Gbit DDR2 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 54 页 / 3010 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB18TC1G[80/16]0AF  
1-Gbit DDR2 SDRAM  
6
Currents Specifications and Conditions  
For Double-Data-Rate-Two SDRAMs described in this data  
sheet the maximum IDD values are listed in Table 36. The  
measurement conditions for IDD characteristics are listed in  
Table 34, general timing conditions used are listed in  
Table 35. At the end of this chapter the on-die-termination  
currents are defined.  
TABLE 34  
IDD Measurement Conditions  
Parameter  
Symbol Note  
1)2)3)4)5)6)  
Operating Current - One bank Active - Precharge  
IDD0  
t
CK = tCK(IDD), tRC = tRC(IDD), tRAS = tRAS.MIN(IDD), CKE is HIGH, CS is HIGH between valid commands.  
Address and control inputs are switching; Databus inputs are switching.  
1)2)3)4)5)6)  
Operating Current - One bank Active - Read - Precharge  
IDD1  
I
OUT = 0 mA, BL = 4, tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRAS.MIN(IDD), tRCD = tRCD(IDD), AL = 0, CL =  
CL(IDD); CKE is HIGH, CS is HIGH between valid commands. Address and control inputs are  
switching; Databus inputs are switching.  
1)2)3)4)5)6)  
1)2)3)4)5)6)  
1)2)3)4)5)6)  
1)2)3)4)5)6)  
1)2)3)4)5)6)  
1)2)3)4)5)6)  
1)2)3)4)5)6)  
Precharge Power-Down Current  
All banks idle; CKE is LOW; tCK = tCK(IDD);Other control and address inputs are stable; Data bus inputs  
are floating.  
IDD2P  
Precharge Standby Current  
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK(IDD); Other control and address inputs are switching,  
Data bus inputs are switching.  
IDD2N  
Precharge Quiet Standby Current  
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK(IDD); Other control and address inputs are stable,  
Data bus inputs are floating.  
IDD2Q  
IDD3P(0)  
IDD3P(1)  
IDD3N  
Active Power-Down Current  
All banks open; tCK = tCK(IDD), CKE is LOW; Other control and address inputs are stable; Data bus  
inputs are floating. MRS A12 bit is set to “0” (Fast Power-down Exit).  
Active Power-Down Current  
All banks open; tCK = tCK(IDD), CKE is LOW; Other control and address inputs are stable, Data bus  
inputs are floating. MRS A12 bit is set to 1 (Slow Power-down Exit);  
Active Standby Current  
All banks open; tCK = tCK(IDD); tRAS = tRAS.MAX(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid  
commands. Address inputs are switching; Data Bus inputs are switching;  
Operating Current  
IDD4R  
Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CL(IDD); tCK = tCK(IDD); tRAS  
= tRAS.MAX.(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands. Address inputs are  
switching; Data Bus inputs are switching; IOUT = 0 mA.  
1)2)3)4)5)6)  
1)2)3)4)5)6)  
Operating Current  
IDD4W  
Burst Write: All banks open; Continuous burst writes; BL = 4; AL = 0, CL = CL(IDD); tCK = tCK(IDD); tRAS  
= tRAS.MAX(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands. Address inputs are  
switching; Data Bus inputs are switching;  
Burst Refresh Current  
IDD5B  
t
CK = tCK(IDD), Refresh command every tRFC = tRFC(IDD) interval, CKE is HIGH, CS is HIGH between valid  
commands, Other control and address inputs are switching, Data bus inputs are switching.  
Rev. 1.11, 2006-09  
31  
03292006-PJAE-UQLG  
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