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HYB18TC1G800AF 参数 Datasheet PDF下载

HYB18TC1G800AF图片预览
型号: HYB18TC1G800AF
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位DDR2 SDRAM [1-Gbit DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 54 页 / 3010 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB18TC1G[80/16]0AF  
1-Gbit DDR2 SDRAM  
Parameter  
Symbol  
DDR2–667  
Unit  
Note  
1)2)3)4)5)6)7)  
Min.  
Max.  
27)  
27)  
Active to active command period for 1KB page  
size products  
tRRD  
tRRD  
7.5  
ns  
ns  
Active to active command period for 2KB page  
size products  
10  
27)  
27)  
Four Activate Window for 1KB page size products tFAW  
Four Activate Window for 2KB page size products tFAW  
37.5  
ns  
50  
ns  
CAS to CAS command delay  
Write recovery time  
tCCD  
tWR  
2
nCK  
ns  
27)  
15  
28)29)  
27)30)  
27)  
Auto-Precharge write recovery + precharge time tDAL  
WR + tnRP  
7.5  
nCK  
ns  
Internal write to read command delay  
Internal Read to Precharge command delay  
Exit self-refresh to a non-read command  
Exit self-refresh to read command  
tWTR  
tRTP  
tXSNR  
tXSRD  
tXP  
7.5  
ns  
27)  
t
RFC +10  
ns  
200  
2
nCK  
nCK  
Exit precharge power-down to any valid  
command (other than NOP or Deselect)  
Exit power down to read command  
tXARD  
2
nCK  
nCK  
Exit active power-down mode to read command tXARDS  
7 – AL  
(slow exit, lower power)  
31)  
CKE minimum pulse width ( high and low pulse tCKE  
width)  
3
2
nCK  
ODT turn-on delay  
tAOND  
tAON  
2
nCK  
ns  
8)32)  
ODT turn-on  
tAC.MIN  
t
AC.MAX + 0.7  
2 × tCK.AVG  
AC.MAX + 1  
2.5  
AC.MAX + 0.6  
2.5 × tCK.AVG  
AC.MAX + 1  
ODT turn-on (Power down mode)  
tAONPD  
t
AC.MIN + 2  
+
ns  
t
ODT turn-off delay  
tAOFD  
tAOF  
2.5  
nCK  
ns  
33)34)  
ODT turn-off  
tAC.MIN  
t
ODT turn-off (Power down mode)  
tAOFPD  
t
AC.MIN + 2  
+
ns  
t
ODT to power down entry latency  
ODT to power down exit latency  
Mode register set command cycle time  
MRS command to ODT update delay  
OCD drive mode output delay  
tANPD  
tAXPD  
tMRD  
tMOD  
tOIT  
3
8
2
0
0
12  
12  
nCK  
nCK  
nCK  
ns  
28)  
28)  
ns  
Minimum time clocks remain ON after CKE  
asynchronously drops LOW  
tDELAY  
t
LS + tCK .AVG  
+
ns  
tLH  
1)  
V
DDQ = 1.8 V ± 0.1V; VDD = 1.8 V ± 0.1 V. See notes 4)5)6)7)  
2) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down  
and then restarted through the specified initialization sequence before normal operation can continue.  
3) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew  
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.  
4) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,  
input reference level is the crosspoint when in differential strobe mode.  
5) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.  
Rev. 1.11, 2006-09  
38  
03292006-PJAE-UQLG  
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