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HYB18TC1G800AF 参数 Datasheet PDF下载

HYB18TC1G800AF图片预览
型号: HYB18TC1G800AF
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位DDR2 SDRAM [1-Gbit DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 54 页 / 3010 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB18TC1G[80/16]0AF  
1-Gbit DDR2 SDRAM  
TABLE 39  
Speed Grade Definition Speed Bins for DDR2–400B  
Speed Grade  
DDR2–400B  
Unit  
Note  
IFX Sort Name  
–5  
CAS-RCD-RP latencies  
3–3–3  
tCK  
Parameter  
Symbol  
Min.  
Max.  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)5)  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)  
Clock Frequency  
@ CL = 3  
@ CL = 4  
@ CL = 5  
tCK  
5
8
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tCK  
5
8
tCK  
5
8
Row Active Time  
Row Cycle Time  
RAS-CAS-Delay  
Row Precharge Time  
tRAS  
tRC  
tRCD  
tRP  
40  
55  
15  
15  
70000  
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew  
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal  
OCD drive strength (EMRS(1) A1 = 0).  
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,  
input reference level is the crosspoint when in differential strobe mode.  
3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.  
4) The output timing reference voltage level is VTT  
.
5) RAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 × tREFI  
t
.
Rev. 1.11, 2006-09  
36  
03292006-PJAE-UQLG  
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