欢迎访问ic37.com |
会员登录 免费注册
发布采购

HYB18T512160B2F-3.7 参数 Datasheet PDF下载

HYB18T512160B2F-3.7图片预览
型号: HYB18T512160B2F-3.7
PDF下载: 下载PDF文件 查看货源
内容描述: 512兆位双数据速率 - 双SDRAM的 [512-Mbit Double-Data-Rate-Two SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 69 页 / 3853 K
品牌: QIMONDA [ QIMONDA AG ]
 浏览型号HYB18T512160B2F-3.7的Datasheet PDF文件第29页浏览型号HYB18T512160B2F-3.7的Datasheet PDF文件第30页浏览型号HYB18T512160B2F-3.7的Datasheet PDF文件第31页浏览型号HYB18T512160B2F-3.7的Datasheet PDF文件第32页浏览型号HYB18T512160B2F-3.7的Datasheet PDF文件第34页浏览型号HYB18T512160B2F-3.7的Datasheet PDF文件第35页浏览型号HYB18T512160B2F-3.7的Datasheet PDF文件第36页浏览型号HYB18T512160B2F-3.7的Datasheet PDF文件第37页  
Internet Data Sheet  
HY[B/I]18T512[40/80/16]0B2[C/F](L)  
512-Mbit Double-Data-Rate-Two SDRAM  
5.4  
Output Buffer Characteristics  
This chapter describes the Output Buffer Characteristics.  
TABLE 29  
SSTL_18 Output DC Current Drive  
Symbol  
Parameter  
SSTL_18  
Unit  
Note  
1)2)  
IOH  
IOL  
Output Minimum Source DC Current  
Output Minimum Sink DC Current  
–13.4  
13.4  
mA  
mA  
2)3)  
1)  
VDDQ = 1.7 V; VOUT = 1.42 V. (VOUTVDDQ) / IOH must be less than 21 Ohm for values of VOUT between VDDQ and VDDQ – 280 mV.  
2) The values of IOH(dc) and IOL(dc) are based on the conditions given in 1) and 3). They are used to test drive current capability to ensure VIH.MIN  
plus a noise margin and VIL.MAX minus a noise margin are delivered to an SSTL_18 receiver. The actual current values are derived by  
shifting the desired driver operating points along 21 Ohm load line to define a convenient current for measurement.  
.
3)  
VDDQ = 1.7 V; VOUT = 280 mV. VOUT / IOL must be less than 21 Ohm for values of VOUT between 0 V and 280 mV.  
TABLE 30  
SSTL_18 Output AC Test Conditions  
Symbol  
Parameter  
SSTL_18  
Unit  
Note  
1)  
VOH  
VOL  
Minimum Required Output Pull-up  
VTT + 0.603  
VTT – 0.603  
0.5 × VDDQ  
V
V
V
1)  
Maximum Required Output Pull-down  
Output Timing Measurement Reference Level  
VOTR  
1) SSTL_18 test load for VOH and VOL is different from the referenced load. The SSTL_18 test load has a 20 Ohm series resistor additionally  
to the 25 Ohm termination resistor into VTT. The SSTL_18 definition assumes that ± 335 mV must be developed across the effectively  
25 Ohm termination resistor (13.4 mA × 25 Ohm = 335 mV). With an additional series resistor of 20 Ohm this translates into a minimum  
requirement of 603 mV swing relative to VTT, at the ouput device (13.4 mA × 45 Ohm = 603 mV).  
TABLE 31  
OCD Default Characteristics  
Symbol  
Description  
Min.  
Nominal  
Max.  
Unit  
Note  
1)2)  
Output Impedance  
0
1)2)3)  
4)  
Pull-up / Pull down mismatch  
4
Output Impedance step size  
for OCD calibration  
0
1.5  
1)5)6)7)  
SOUT  
Output Slew Rate  
1.5  
5.0  
V / ns  
1)  
VDDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ± 0.1 V  
2) Impedance measurement condition for output source dc current: VDDQ = 1.7 V, VOUT = 1420 mV; (VOUTVDDQ) / IOH must be less than  
23.4 Ohms for values of VOUT between VDDQ and VDDQ – 280 mV. Impedance measurement condition for output sink dc current: VDDQ  
1.7 V; VOUT = –280 mV; VOUT / IOL must be less than 23.4 Ohms for values of VOUT between 0 V and 280 mV.  
=
3) Mismatch is absolute value between pull-up and pull-down, both measured at same temperature and voltage.  
4) This represents the step size when the OCD is near 18 Ohms at nominal conditions across all process parameters and represents only  
the DRAM uncertainty. A 0 Ohm value (no calibration) can only be achieved if the OCD impedance is 18 ± 0.75 Ohms under nominal  
conditions.  
5) The absolute value of the Slew Rate as measured from DC to DC is equal to or greater than the Slew Rate as measured from AC to AC.  
This is verified by design and characterization but not subject to production test.  
6) Timing skew due to DRAM output Slew Rate mis-match between DQS / DQS and associated DQ’s is included in tDQSQ and tQHS  
specification.  
7) DRAM output Slew Rate specification applies to 400, 533 and 667 MT/s speed bins.  
Rev. 1.12, 2007-05  
33  
10062006-YPTZ-CDR7  
 复制成功!