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HYB18T512160B2F-3.7 参数 Datasheet PDF下载

HYB18T512160B2F-3.7图片预览
型号: HYB18T512160B2F-3.7
PDF下载: 下载PDF文件 查看货源
内容描述: 512兆位双数据速率 - 双SDRAM的 [512-Mbit Double-Data-Rate-Two SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 69 页 / 3853 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/I]18T512[40/80/16]0B2[C/F](L)  
512-Mbit Double-Data-Rate-Two SDRAM  
5.3  
DC & AC Characteristics  
DDR2 SDRAM pin timing are specified for either single ended  
or differential mode depending on the setting of the EMRS(1)  
“Enable DQS” mode bit; timing advantages of differential  
mode are realized in system design. The method by which the  
DDR2 SDRAM pin timing are measured is mode dependent.  
In single ended mode, timing relationships are measured  
In differential mode, these timing relationships are measured  
relative to the crosspoint of DQS and its complement, DQS.  
This distinction in timing methods is verified by design and  
characterization but not subject to production test. In single  
ended mode, the DQS (and RDQS) signals are internally  
disabled and don’t care.  
relative to the rising or falling edges of DQS crossing at VREF  
.
TABLE 25  
DC & AC Logic Input Levels for DDR2-667 and DDR2-800  
Symbol  
Parameter  
DDR2-667, DDR2-800  
Units  
Min.  
Max.  
VIH(dc)  
VIL(dc)  
VIH(ac)  
VIL(ac)  
DC input logic high  
DC input low  
V
REF + 0.125  
V
V
DDQ + 0.3  
REF – 0.125  
V
V
V
V
–0.3  
AC input logic high  
AC input low  
V
REF + 0.200  
VREF – 0.200  
TABLE 26  
DC & AC Logic Input Levels for DDR2-533 and DDR2-400  
Symbol  
Parameter  
DDR2-533, DDR2-400  
Units  
Min.  
Max.  
VIH(dc)  
VIL(dc)  
VIH(ac)  
VIL(ac)  
DC input logic high  
DC input low  
V
REF + 0.125  
V
V
DDQ + 0.3  
REF - 0.125  
V
V
V
V
–0.3  
AC input logic high  
AC input low  
V
REF + 0.250  
VREF - 0.250  
Rev. 1.12, 2007-05  
30  
10062006-YPTZ-CDR7  
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