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HYB18T512161B2F-25 参数 Datasheet PDF下载

HYB18T512161B2F-25图片预览
型号: HYB18T512161B2F-25
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, PLASTIC, TFBGA-84]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 37 页 / 1297 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB18T512161B2F–20/25  
512-Mbit Double-Data-Rate-Two SDRAM  
5.4  
Output Buffer Characteristics  
TABLE 23  
Full Strength Calibrated Pull-up Driver Characteristics  
Voltage (V)  
Calibrated Pull-up Driver Current [mA]  
Nominal Minimum1) Nominal  
Nominal(18  
Nominal  
High2)(17.25  
Ohms)  
Nominal  
(21 Ohms)  
Low2)(18.75 Ohms) ohms)3)  
Maximum4) (15  
Ohms)  
0.2  
0.3  
0.4  
–9.5  
–10.7  
–16.0  
–21.0  
–11.4  
–16.5  
–21.2  
–11.8  
–17.4  
–23.0  
–13.3  
–20.0  
–27.0  
–14.3  
–18.3  
1) The driver characteristics evaluation conditions are Nominal Minimum 95 °C (TCASE). VDDQ = 1.7 V, any process  
2) The driver characteristics evaluation conditions are Nominal Low and Nominal High 25 °C (TCASE), VDDQ = 1.8 V, any process  
3) The driver characteristics evaluation conditions are Nominal 25 °C (TCASE), VDDQ = 1.8 V, typical process  
4) The driver characteristics evaluation conditions are Nominal Maximum 0 °C (TCASE), VDDQ = 1.9 V, any process  
TABLE 24  
Full Strength Calibrated Pull-down Driver Characteristics  
Voltage (V)  
Calibrated Pull-down Driver Current [mA]  
Nominal Minimum1)  
(21 Ohms)  
Nominal  
Low2)(18.75  
Ohms)  
Nominal3)(18  
ohms)  
Nominal  
High2)(17.25  
Ohms)  
Nominal  
Maximum4) (15  
Ohms)  
0.2  
0.3  
0.4  
9.5  
10.7  
16.0  
21.0  
11.5  
16.6  
21.6  
11.8  
17.4  
23.0  
13.3  
20.0  
27.0  
14.3  
18.7  
1) The driver characteristics evaluation conditions are Nominal Minimum 95 °C (TCASE). VDDQ = 1.7 V, any process  
2) The driver characteristics evaluation conditions are Nominal Low and Nominal High 25 °C (TCASE), VDDQ = 1.8V, any process  
3) The driver characteristics evaluation conditions are Nominal 25 °C (TCASE), VDDQ = 1.8 V, typical process  
4) The driver characteristics evaluation conditions are Nominal Maximum 0 °C (TCASE), VDDQ = 1.9 V, any process  
Rev. 1.1, 2007-06  
21  
05152007-ZYAH-ACMZ  
Date: 2008-02-26  
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