欢迎访问ic37.com |
会员登录 免费注册
发布采购

HYB18T2G402BF-3.7 参数 Datasheet PDF下载

HYB18T2G402BF-3.7图片预览
型号: HYB18T2G402BF-3.7
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 512MX4, 0.8ns, CMOS, PBGA71, GREEN, PLASTIC, TFBGA-71]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 55 页 / 3279 K
品牌: QIMONDA [ QIMONDA AG ]
 浏览型号HYB18T2G402BF-3.7的Datasheet PDF文件第1页浏览型号HYB18T2G402BF-3.7的Datasheet PDF文件第2页浏览型号HYB18T2G402BF-3.7的Datasheet PDF文件第3页浏览型号HYB18T2G402BF-3.7的Datasheet PDF文件第5页浏览型号HYB18T2G402BF-3.7的Datasheet PDF文件第6页浏览型号HYB18T2G402BF-3.7的Datasheet PDF文件第7页浏览型号HYB18T2G402BF-3.7的Datasheet PDF文件第8页浏览型号HYB18T2G402BF-3.7的Datasheet PDF文件第9页  
Internet Data Sheet  
HYB18T2G[40/80]2BF  
2-Gbit Dual Die Double-Data-Rate-Two SDRAM  
TABLE 1  
Performance Table  
QAG Speed Code  
–2.5  
–3S  
–3.7  
–5  
Unit  
DRAM Speed Grade  
CAS-RCD-RP latencies  
DDR2  
–800E  
6–6–6  
–667D  
5–5–5  
–533C  
4–4–4  
–400B  
3–3–3  
tCK  
Max. Clock Frequency CL3  
CL4  
fCK3  
fCK4  
fCK5  
fCK6  
tRCD  
tRP  
200  
266  
333  
400  
15  
200  
266  
333  
200  
266  
266  
200  
200  
MHz  
MHz  
MHz  
MHz  
ns  
CL5  
CL6  
Min. RAS-CAS-Delay  
Min. Row Precharge Time  
Min. Row Active Time  
Min. Row Cycle Time  
15  
15  
15  
15  
40  
55  
15  
15  
15  
ns  
tRAS  
tRC  
45  
45  
45  
ns  
60  
60  
60  
ns  
1.2  
Description  
The 2-Gbit DDR2 DRAM consists of two 1-Gbit Double Data-  
Rate-Two dies in one package. Each 1-Gbit device is  
organized as 32 Mbit ×4 I/O ×8 banks or 16 Mbit ×8 I/O ×8  
banks chip.  
CK falling). All I/Os are synchronized with a single ended  
DQS or differential DQS-DQS pair in a source synchronous  
fashion.  
A 17 bit address bus for ×4 and ×8 organised components is  
used to convey row, column and bank address information in  
a RAS-CAS multiplexing style.  
These synchronous devices achieve high speed transfer  
rates starting at 400 Mb/sec/pin for general applications. See  
Table 1 for performance figures.  
The DDR2 device operates with a 1.8 V ± 0.1 V power  
supply. An Auto-Refresh and Self-Refresh mode is provided  
along with various power-saving power-down modes.  
The device is designed to comply with all DDR2 DRAM key  
features:  
1. Posted CAS with additive latency.  
2. Write latency = read latency - 1.  
3. Normal and weak strength data-output driver.  
4. Off-Chip Driver (OCD) impedance adjustment.  
5. On-Die Termination (ODT) function.  
Since dual-die components share the same DQ bus, each of  
the two 1-Gbit dies can be individually selected by its own CS,  
CKE and ODT signal. All other signals are common for both  
dies.  
The functionality described and the timing specifications  
included in this data sheet are for the DLL Enabled mode of  
operation.  
All of the control and address inputs are synchronized with a  
pair of externally supplied differential clocks. Inputs are  
latched at the cross point of differential clocks (CK rising and  
The DDR2 SDRAM is available in TFBGA package.  
Rev. 1.10, 2007-11  
4
10192006-0E3U-5BSU  
Date: 2007-11-05