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HYB18T1G800AFL-3.7 参数 Datasheet PDF下载

HYB18T1G800AFL-3.7图片预览
型号: HYB18T1G800AFL-3.7
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 128MX8, 0.5ns, CMOS, PBGA68, ROHS COMPLIANT, PLASTIC, TFBGA-68]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 53 页 / 2560 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB18T1G[40/80/16]0AF(L)–[3S/3.7/5]  
1-Gbit DDR2 SDRAM  
Functional Description  
Table 8  
Field  
BT  
Mode Register Definition (BA[2:0] = 000B)  
Bits Type1)  
Description  
Burst Type  
3
w
0B  
1B  
BT, Sequential  
BT, Interleaved  
BL  
[2:0]  
w
Burst Length  
Note:All other bit combinations are illegal.  
010B BL, 4  
011B BL, 8  
1) w = write only register bits  
2) Number of clock cycles for write recovery during auto-precharge. WR in clock cycles is calculated by dividing tWR (in ns) by  
tCK (in ns) and rounding up to the next integer: WR [cycles] tWR (ns) / tCK (ns). The mode register must be programmed to  
fulfill the minimum requirement for the analogue tWR timing WRMIN is determined by tCK.MAX and WRMAX is determined by  
tCK.MIN  
.
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Table 9  
Field  
BA2  
Extended Mode Register Definition (BA[2:0] = 001B)  
Bits Type1)  
Description  
16  
reg. addr.  
Bank Address [2]  
Note: BA2 not available on 256 Mbit and 512 Mbit components  
0B BA2, Bank Address  
Bank Address [1]  
BA1  
BA0  
15  
14  
0B  
BA1, Bank Address  
Bank Address [0]  
0B  
BA0, Bank Address  
Internet Data Sheet  
16  
Rev. 1.31, 2007-01  
03292006-1X3H-6X8S  
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