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HYB18H512321AF-12 参数 Datasheet PDF下载

HYB18H512321AF-12图片预览
型号: HYB18H512321AF-12
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous Graphics RAM, 16MX32, 0.22ns, CMOS, PBGA136, 11 X 14 MM, GREEN, PLASTIC, MO-207IDR-Z, TFBGA-136]
分类和应用: 时钟动态存储器内存集成电路
文件页数/大小: 100 页 / 1884 K
品牌: QIMONDA [ QIMONDA AG ]
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HYB18H512321AF  
512-Mbit GDDR3  
Electrical Characteristics  
5
Electrical Characteristics  
5.1  
Absolute Maximum Ratings and Operation Conditions  
Table 26  
Absolute Maximum Ratings  
Parameter  
Symbol  
Rating  
min.  
-0.5  
-0.5  
-0.5  
Unit  
max.  
2.5  
2.5  
2.5  
Power Supply Voltage  
Power Supply Voltage for Output Buffer  
Input Voltage  
VDD  
VDDQ  
VIN  
V
V
V
Output Voltage  
VOUT  
TSTG  
TJ  
-0.5  
-55  
2.5  
V
Storage Temperature  
Junction Temperature  
Short Circuit Output Current  
+150  
+125  
50  
°C  
°C  
mA  
IOUT  
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage of the  
device. This is a stress rating only, and functional operation of the device at these or any other conditions above  
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
Data Sheet  
80  
Rev. 1.73, 2005-08  
05122004-B1L1-JEN8  
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