HYB18H512321AF
512-Mbit GDDR3
Electrical Characteristics
5.2
DC Operation Conditions
5.2.1
Recommended Power & DC Operation Conditions.
Table 27
Power & DC Operation Conditions.( 0 °C ≤ Tc ≤ 85 °C)
Parameter
Symbol
Limit Values
min.
1.9
1.9
1.7
1.7
0.69*VDDQ
—
–5.0
–5.0
Unit Note
s
typ.
2.0
2.0
1.8
1.8
—
—
—
—
—
max.
2.1
2.1
1.9
1.9
0.71*VDDQ
0.8
+5.0
+5.0
+5.0
1)2)
Power Supply Voltage
Power Supply Voltage for I/O Buffer
Power Supply Voltage
Power Supply Voltage for I/O Buffer
Reference Voltage
Output Low Voltage
Input leakage current
CLK Input leakage current
Output leakage current
VDD, VDDA
VDDQ
VDD, VDDA
VDDQ
VREF
VOL(DC)
IIL
V
V
V
V
1)2)
1)3)
1)3)
4)
V
V
5)
5)
µA
µA
µA
IILC
IOL
–5.0
1) VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
2) HYB18H512321AF–12/14/16/20
3) HYB18H512321AFL14/16/20
4) VREF is expected to equal 70% of VDDQ for the transmitting device and to track variations in the DC level of the
same. Peak-to-peak noise on VREF may not exceed ±2% VREF (DC). Thus, from 70% of VDDQ, VREF is allowed ±
19mV for DC error and an additionnal ± 27mV for AC noise.
5) IIL and IOL are measured with ODT disabled.
Data Sheet
81
Rev. 1.73, 2005-08
05122004-B1L1-JEN8