Internet Data Sheet
HYB18H512321BF
512-Mbit GDDR3
4.10
Operating Currents
4.10.1
Operating Current Ratings for HYB18H512321BF
TABLE 18
Operating Current Ratings ( 0 °C ≤ Tc ≤ 85 °C)
Parameter
Symbol Values
Unit Note
-8
–10
–11
–12
–14
Typ
Typ.
Typ.
Typ.
Typ.
1)2)3)
Operating Current
IDD0
630
705
415
470
505
410
585
885
890
740
520
8
580
650
380
440
450
380
540
810
800
700
475
8
535
600
350
410
400
350
500
740
720
660
435
8
500
540
315
380
350
320
460
670
660
620
400
8
435
415
235
310
275
235
395
575
565
535
350
8
mA
1)2)3)
Operating Current
IDD1
mA
1)2)3)
Precharge Power-Down Standby Current
Precharge Floating Standby Current
Precharge Quiet Standby Current
Active Power-Down Standy Current
Active Standby Current
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5B
IDD5D
IDD6
mA
1)2)3)
mA
1)2)3)
mA
1)2)3)
mA
1)2)3)
mA
1)2)3)
Operating Current Burst Read
Operating Current Burst Write
Auto-Refresh Current (tRC=min(tRFC))
Auto-Refresh Current at tREFI
Self Refresh Current
mA
1)2)3)
mA
1)2)3)
mA
1)2)3)
mA
1)2)3)4)
mA
1)2)3)
Operating Current
IDD7
920
860
800
740
680
mA
1) IDD specifications are tested after the device is properly initialized.
2) Input slew rate = 3 V/ns.
3) Measured with Output open and On Die termination off.
4) Enables on-chip refresh and address counter.
Rev. 1.3, 2007-12
29
05292007-WAU2-UU95
QIMONDA [ QIMONDA AG ]
