Internet Data Sheet
HYB18H512321BF
512-Mbit GDDR3
TABLE 14
Programmed Driver IV Characteristics at 40 Ohm
Voltage (V)
Pull-Down Current (mA)
Maximum
Pull-Up Current (mA)
Minimum
Minimum
Maximum
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.32
3.04
-2.44
-3.27
4.56
5.98
-4.79
-6.42
6.69
8.82
-7.03
-9.45
8.74
11.56
14.19
16.72
19.14
21.44
23.61
26.10
28.45
30.45
32.73
34.95
37.10
39.15
41.01
42.53
43.71
44.89
-9.18
-12.37
-15.17
-17.83
-20.37
-22.78
-25.04
-27.17
-29.17
-31.25
-33.00
-35.00
-37.00
-39.14
-41.25
-43.29
-45.23
-47.07
10.70
12.56
14.34
16.01
17.61
19.11
20.53
21.92
23.29
24.65
26.00
27.35
28.70
30.08
—
-11.23
-13.17
-15.01
-16.74
-18.37
-19.90
.21.34
-22.72
-24.07
-25.40
-26.73
-28.06
-29.37
-30.66
—
—
—
4.7.2
Termination IV Characteristic at 60 Ohms
Figure 15 represents the DQ termination Pull-Up IV characteristic under process, voltage and temperature best and worst case
conditions. The actual DQ termination Pull-Up current must lie between these two bounding curves. The value of the external
ZQ resistor is 240 Ω, setting the nominal DQ termination impedance to 60 Ω. (Extended Mode Register programmed to ZQ/4).
Rev. 1.3, 2007-12
25
05292007-WAU2-UU95
QIMONDA [ QIMONDA AG ]
