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P93U422-35CMB 参数 Datasheet PDF下载

P93U422-35CMB图片预览
型号: P93U422-35CMB
PDF下载: 下载PDF文件 查看货源
内容描述: HIGH SPEED 256 ×4的静态CMOS RAM [HIGH SPEED 256 x 4 STATIC CMOS RAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 10 页 / 217 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
 浏览型号P93U422-35CMB的Datasheet PDF文件第1页浏览型号P93U422-35CMB的Datasheet PDF文件第2页浏览型号P93U422-35CMB的Datasheet PDF文件第3页浏览型号P93U422-35CMB的Datasheet PDF文件第5页浏览型号P93U422-35CMB的Datasheet PDF文件第6页浏览型号P93U422-35CMB的Datasheet PDF文件第7页浏览型号P93U422-35CMB的Datasheet PDF文件第8页浏览型号P93U422-35CMB的Datasheet PDF文件第9页  
P93U422  
Notes:  
5) Test conditions assume signal transition times of 10 ns or less.  
6) Extended temperature operation guaranteed with 400 linear feet per minute of air flow.  
7) tPLH(A) and tPHL(A) are tested with S1 closed and CL = 15 pF with both input and output timing referenced to 1.5V  
8) tPZH(WE), tPZH(CS1, CS2) and t (OE) are measured with S1 open, CL = 15 pF and with both the input and output timing  
referenced to 1.5V. tPZL(WE),PtPZHZL(CS1, CS2) and tPZL(OE) are measured with S1 closed, CL = 15pF and with both the input and  
output timing referenced to 1.5V.  
tPHZ(WE), tPHZ(CS1, CS ) and t (OE) are measured with S1 open, CL < 5pF and are measured between the 1.5V level  
on the  
input to the VOH -500mV2level oPnHZthe output.  
t
(WE), tPLZ(CS1, CS2) and tPLZ(OE) are measured with S1 closed, CL < 5pF and are measured between the 1.5V level on the  
inpPuLtZ to the VOL +500mV level on the output.  
SWITCHING TEST  
Test Circuits (7, 8)  
Document # SRAM102 REV A  
Page 4 of 10  
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