P93U422
MAXIMUMRATINGS(1)
Symbol
Parameter
Value
Unit
Symbol
Parameter
Value
Unit
VCC
Power Supply Pin with
Respect to GND
–0.5 to +7
V
TBIAS
Temperature Under
Bias
–55 to +125 °C
Terminal Voltage with
Respect to GND
(up to 7.0V)
–0.5 to
TSTG
IOUT
Storage Temperature
DC Output Current
–65 to +150 °C
VTERM
TA
VCC +0.5
V
20
mA
Operating Temperature –55 to +125 °C
CAPACITANCES(4)
RECOMMENDEDOPERATINGCONDITIONS
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)
Grade(2)
Commercial
Military
Gnd
0V
0V
Symbol
Parameter
Input Capacitance VIN = 0V
Conditions Typ. Unit
Ambient Temp
0°C to 70°C
–55°C to 125°C
Vcc
5.0V ±10%
5.0V ±10%
C
5
pF
IN
COUT
Output Capacitance VOUT = 0V
7
pF
DCELECTRICALCHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
P93U422
Test Conditions
Unit
Symbol
Parameter
Min.
Max.
0.45
0.8
VOH
VOL
Output High Voltage
Output Low Voltage
Input High Level
VCC = Min., VIN = VIH or VIL, IOH = –5.2 mA
VCC = Min., VIN = VIH or VIL, IOL = 8.0 mA
2.4
V
V
V
V
VIH
VIL
IIL
2.1
Input Low Level
Input Low Current
Input High Current
VIN = 0.40 V
VCC = Max, VIN = 4.5V
Output Short Circuit Current (3) VCC = Max., VOUT = 0.0V
µA
µA
mA
–300
40
–70
70
I
IH
ISC
TA = 125°C
TA = 75°C
TA = 0°C
70
80
Power Supply Current
All Inputs = GND
VCC = Max.
mA
ICC
TA = –55°C
90
Input Clamp Voltage
VCL
ICEX
IIN = –10mA
–1.5
50
V
VOUT = 2.4V, VCC = Max.
Output Leakage Current
µA
VOUT = 0.5V, VCC = Max.
–50
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may 2. Extendedtemperatureoperationguaranteedwith400linearfeetperminute
causepermanentdamagetothedevice. Thisisastressratingonlyand
functionaloperationofthedeviceattheseoranyotherconditionsabove
those indicated in the operational sections of this specification is not
implied. ExposuretoMAXIMUMratingconditionsforextendedperiods
mayaffectreliability
of air flow.
3. Fortestpurposes,notmorethanoneoutputatatimeshouldbeshorted.Short
circuittestdurationshouldnotexceed30seconds.
4. Thisparameterissampledandnot100%tested.
Document # SRAM102 REV A
Page 2 of 10
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
