MITSUBISHI Nch POWER MOSFET
FS50UMJ-06
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
8
100
80
60
40
20
0
T
ch = 25°C
V
GS = 0V
I
D = 50A
Pulse Test
T
C
= 125°C
V
DS = 10V
20V
40V
6
75°C
25°C
4
2
0
0
20
40
60
80
100
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE
Q
g
(nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
4.0
3.2
2.4
1.6
0.8
0
V
GS = 10V
V
DS = 10V
ID = 1mA
I
D
= 1/2I
D
5
Pulse Test
4
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
102
7
1.4
1.2
1.0
0.8
0.6
0.4
V
I
GS = 0V
D = 1mA
5
3
2
101
7
5
3
D = 1.0
2
0.5
0.2
100
7
P
DM
5
3
0.1
0.05
0.02
0.01
tw
2
10–1
7
T
tw
D
=
5
T
3
Single Pulse
2
10–2
–50
0
50
100
150
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
PULSE WIDTH (s)
CHANNEL TEMPERATURE Tch (°C)
tw
Feb.1999