MITSUBISHI Nch POWER MOSFET
FS50UMJ-06
HIGH-SPEED SWITCHING USE
FS50UMJ-06
OUTLINE DRAWING
Dimensions in mm
4.5
1.3
10.5MAX.
r
f 3.6
1.0
0.8
D
2.54
2.54
0.5
2.6
q
w e
w r
q GATE
¡4V DRIVE
w DRAIN
e SOURCE
r DRAIN
q
¡VDSS ................................................................................. 60V
¡rDS (ON) (MAX) ............................................................. 20mΩ
¡ID ........................................................................................ 50A
¡Integrated Fast Recovery Diode (TYP.) ............ 70ns
e
TO-220
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
V
VGS = 0V
VDS = 0V
60
±20
V
50
A
IDM
IDA
Drain current (Pulsed)
200
A
Avalanche drain current (Pulsed) L = 100µH
Source current
50
50
A
IS
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
200
A
PD
70
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
2.0
Tstg
—
Storage temperature
Weight
Typical value
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
