MITSUBISHI Nch POWER MOSFET
FS50UMJ-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
60
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
VGS = ±20V, VDS = 0V
VDS = 60V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 25A, VGS = 10V
ID = 25A, VGS = 4V
—
±0.1
0.1
2.0
20
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
1.5
15
mΩ
mΩ
V
18
24
Drain-source on-state voltage ID = 25A, VGS = 10V
0.38
41
0.50
—
ID = 25A, VDS = 10V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
S
Ciss
3000
580
300
22
—
pF
pF
pF
ns
VDS = 10V, VGS = 0V, f = 1MHz
Coss
Crss
—
—
td (on)
tr
—
65
—
ns
VDD = 30V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
Fall time
250
160
1.0
—
—
ns
—
ns
VSD
Source-drain voltage
Thermal resistance
Reverse recovery time
IS = 25A, VGS = 0V
Channel to case
1.5
1.79
—
V
Rth (ch-c)
trr
°C/W
ns
IS = 50A, dis/dt = –100A/µs
70
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
100
80
60
40
20
0
3
2
tw = 10ms
102
7
5
3
2
100ms
101
7
1ms
5
3
2
10ms
100ms
100
7
T
C
= 25°C
DC
5
3
Single Pulse
3
5 7100 2 3 5 7101 2 3 5 7102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS = 10V
100
80
60
40
20
0
50
40
30
20
10
0
TC = 25°C
Pulse Test
5V
5V
4V
VGS = 10V
3.5V
PD
= 70W
4V
T
C
= 25°C
Pulse Test
3V
3V
2.5V
PD
= 70W
4
0
1
2
3
5
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
