MITSUBISHI Nch POWER MOSFET
FS50UMJ-06
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
2.0
1.6
1.2
0.8
0.4
0
50
40
30
20
10
0
T
C
= 25°C
T
C
= 25°C
Pulse Test
Pulse Test
V
GS = 4V
I
D
= 80A
50A
20A
10V
0
0
3
2
4
6
8
10
3
5 7100 2 3 5 7101 2 3 5 7102 2 3
DRAIN CURRENT (A)
GATE-SOURCE VOLTAGE
V
GS (V)
ID
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
100
80
60
40
20
0
102
7
5
V
DS = 10V
T
V
C
= 25°C
DS = 10V
Pulse Test
Pulse Test
TC = 25°C
75°C
125°C
3
2
101
7
5
3
2
100
2
4
6
8
10
100
2
3
5
7 101
2
3
5
7 102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
103
7
5
T
V
V
ch = 25°C
DD = 30V
GS = 10V
103
7
5
3
2
t
d(off)
R
GEN = RGS = 50Ω
Ciss
3
2
103
7
t
f
102
7
5
Coss
Crss
5
3
2
t
r
102
7
3
2
T
ch = 25°C
5
3
2
t
d(on)
f = 1MH
Z
V
GS = 0V
101
5 7100 2 3 5 7101 2 3 5 7102 2 3
100
2
3
5
7 101
2
3
5
7 102
DRAIN-SOURCE VOLTAGE DS (V)
V
DRAIN CURRENT
ID (A)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
