TISPPBL2SDR 参数 Datasheet PDF下载

TISPPBL2SD

PROGRAMMABLE OVERVOLTAGE PROTECTORS

FOR ERICSSON COMPONENTS PBL 3xxx SLICS

AUGUST 1999

CUMULATIVE POPULATION %

vs

LIMITING TIME

TC6XAC

99·999

99·99

99·9

Cumulative Population - %

99

90

70

50

30

10

1

0·1

0·01

DIODE t

FR

for V

F

> 5 V

Outliers

(2) @ 0 µs

50 devices tested from 10 wafer lots

I

F

= 20 A, I

T

= -20 A, 0.5/700 Waveform

T

A

= 25°C, V

GG

= -50 V

1.10

NORMALISED PEAK LIMITING VOLTAGES

vs

JUNCTION TEMPERATURE

TC6XAA

Normalised to 25°C values

of V

(BO)

and V

FRM

I

F

= 20 A, I

T

= -20 A

0.5/700 Waveform

V

GG

= -50 V

g

1.05

g

1.00

THYRISTOR

V

(BO)

0.95

THYRISTOR t

(BR)

for V

(BR)

< V

GG

DIODE

V

FRM

0·001

0.001

1

0.004 0.01

0.04 0.1

0.4

t

(BR)

, t

FR

- Breakdown and Forward Recovery Times - µs

0.90

-40 -30 -20 -10 0

10 20 30 40 50 60 70 80

T

J

- Junction Temperature - °C

Figure 11.

Figure 12.

APPLICATIONS INFORMATION

operation of gated protectors

limit negative overvoltages and the diode sections limit positive overvoltages.

SLIC

PROTECTOR

SLIC

PROTECTOR

SLIC

SLIC

I

K

Th5

TISP

PBL2S

V

GG

C1

I

G

V

Bat

D1

C2

I

F

Th5

TISP

PBL2S

V

GG

V

Bat

C1

D1

C2

AI6XANS

AI6XAOS

Figure 13. NEGATIVE OVERVOLTAGE CONDITION

Figure 14. POSITIVE OVERVOLTAGE CONDITION

Negative overvoltages (Figure 13) are initially clipped close to the SLIC negative supply rail value (V

BAT

) by

the conduction of the transistor base-emitter and the thyristor gate-cathode junctions. If sufficient current is

PRODUCT

8

INFORMATION