TISP4070L3BJ, TISP4350L3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
AUGUST 1999 — REVISED NOVEMBER 1999
electrical characteristics for the T and R terminals, T
A
= 25 °C (unless otherwise noted)
PARAMETER
I
DRM
V
(BO)
Repetitive peak off-
state current
Breakover voltage
V
D
= V
DRM
dv/dt = ±250 V/ms,
R
SOURCE
= 300
Ω
TEST CONDITIONS
T
A
= 25 °C
T
A
= 85 °C
‘4070
‘4350
‘4070
‘4350
±40
±120
±5
T
A
= 85 °C
V
d
= 1 V rms,
V
D
= 0
V
D
= 1 V
C
off
Off-state capacitance
V
D
= 5 V
f = 100 kHz,
V
d
= 1 V rms,
V
D
= 0
V
D
= 1 V
V
D
= 5 V
‘4350
‘4070
40
38
31
26
24
20
±10
50
48
39
33
30
25
pF
MIN
TYP
MAX
±5
±10
±70
±350
±78
±359
±250
±3
±350
UNIT
µA
V
dv/dt
≤
±1000 V/µs, Linear voltage ramp,
V
(BO)
Impulse breakover
voltage
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
I
(BO)
V
T
I
H
dv/dt
I
D
dv/dt = ±250 V/ms,
R
SOURCE
= 300
Ω
mA
V
mA
kV/µs
µA
I
T
= ±5 A, t
W
= 100 µs
I
T
= ±5 A, di/dt = +/-30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
V
D
= ±50 V
f = 100 kHz,
V
thermal characteristics
PARAMETER
TEST CONDITIONS
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
R
θJA
Junction to free air thermal resistance
T
A
= 25 °C, (see Note 5)
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25 °C
NOTE
52
MIN
TYP
MAX
115
°C/W
UNIT
5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
PRODUCT
INFORMATION
3
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