TISP4070L3BJ, TISP4350L3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
AUGUST 1999 — REVISED NOVEMBER 1999
150 V rms a.c., giving a peak voltage of 269 V. The TISP4350L3BJ will not clip the B type ringing voltage as it
has a high impedance up to 275 V.
The TISP4070L3BJ should be connected after the hook switch to protect the following electronics. As the
TISP4070L3BJ has a high impedance up to 58 V, it will switch off after a surge and not be triggered by the
normal exchange battery voltage
These low (L) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend
leads) and supplied in embossed tape reel pack. For alternative voltage and holding current values, consult
the factory. For higher rated impulse currents in the SMB package, the 100 A 10/1000 TISP4xxxH3BJ series
is available.
T = 25 °C (unless otherwise noted)
absolute maximum ratings,
A
RATING
SYMBOL
VALUE
± 58
UNIT
‘4070
‘4350
Repetitive peak off-state voltage,
V
V
DRM
±275
Non-repetitive peak on-state pulse current (see Notes 1, and 2)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape, Type A)
5/310 µs (ITU-T K21, 10/700 µs voltage wave shape)
5/320 µs (FCC Part 68, 9/720 µs voltage wave shape, Type B)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape, Type A)
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
20 ms (50 Hz) full sine wave
50
40
40
30
I
A
A
TSP
12
16.7 ms (60 Hz) full sine wave
I
13
2
TSM
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A
di /dt
120
A/µs
°C
T
Junction temperature
T
-40 to +150
-65 to +150
J
Storage temperature range
T
°C
stg
NOTES: 1. Initially the TISP4xxxL3BJ must be in thermal equilibrium with T = 25 °C.
J
2. The surge may be repeated after the TISP4xxxL3BJ returns to its initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C
T = 25 °C (unless otherwise noted)
overload ratings,
A
RATING
SYMBOL
VALUE
UNIT
A
Peak overload on-state current, Type A impulse (see Note 4)
10/160 µs
10/560 µs
300
I
I
T(OV)M
T(OV)M
150
See Figure 2
for current
versus time
Peak overload on-state current, a.c. power cross tests UL 1950 (see Note 4)
A
NOTE 4: These electrical stress levels may damage the TIS4xxxL3BJ silicon chip. After test, the pass criterion is either that the device is
functional or, if it is faulty, that it has a short circuit fault mode. In the short circuit fault mode, the following equipment is protected
as the device is a permanent short across the line. The equipment would be unprotected if an open circuit fault mode developed.
P R O D U C T
I N F O R M A T I O N
2
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