BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
THERMAL INFORMATION
THERMAL RESPONSE JUNCTION TO CASE
vs
POWER PULSE DURATION
LDX85CZC
1·0
TC = 25°C
60%
40%
20%
10%
0%
0·1
t1
duty cycle = t1/t2
Read time at end of t1,
t2
æZ
ö
TJ (max) – TC = PD (peak) · ç qJC÷ · RqJC (max)
R
è
qJCø
0·01
10-4
10-3
10-2
10-1
100
101
102
t1 - Power Pulse Duration - s
Figure 7.
MAXIMUM POWER DISSIPATION JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
LDX85CPA
1000
TA = 25°C
0%
100
10%
20%
10
40%
60%
1·0
10-4
10-3
10-2
10-1
100
101
102
103
t1 - Power Pulse Duration - s
Figure 8.
P R O D U C T
I N F O R M A T I O N
5