BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-emitter
sustaining voltage
Collector-emitter
cut-off current
Emitter cut-off
current
VCEO(sus)
ICES
IC
=
0.1 A
L = 25 mH
400
V
VCE = 600 V
VBE = 0
IC = 0
10
1
µA
mA
V
IEBO
VEB
=
9 V
Base-emitter
VBE(sat)
VCE(sat)
IB
=
0.2 A
IC
=
1 A
(see Notes 2 and 3)
(see Notes 2 and 3)
0.85
1.1
saturation voltage
Collector-emitter
saturation voltage
IB
IB
=
=
0.2 A
0.4 A
10 V
1 V
IC
IC
=
=
1 A
2 A
0.2
0.4
0.5
1
V
VCE
VCE
VCE
=
=
=
IC = 0.01 A
10
10
10
17.5
15
Forward current
transfer ratio
hFE
IC
IC
=
=
1 A
2 A
(see Notes 2 and 3)
(see Notes 2 and 3)
20
20
5 V
15.5
Anti-parallel diode
forward voltage
VEC
IE
=
1 A
1.2
1.5
V
NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 3.2 mm from the device body.
thermal characteristics
PARAMETER
Junction to free air thermal resistance
Junction to case thermal resistance
MIN
MIN
TYP
MAX
UNIT
RqJA
RqJC
62.5
1.78
°C/W
°C/W
switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
Measured by holding transistor
TYP
MAX
UNIT
Anti-parallel diode
trr
(see Note 4)
1
µs
reverse recovery time in an off condition, VEB = -3 V.
NOTE 4: Tested in a typical High Frequency Electronic Ballast.
inductive-load switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
MIN
TYP
MAX
UNIT
I
C = 1 A
IB(on) = 0.2 A
IB(off) = 0.2 A
V
CC = 40 V
tsv
Storage time
4
5
µs
L = 1 mH
VCLAMP = 300 V
resistive-load switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
TYP
MAX
UNIT
I
C = 1 A
I
B(on) = 0.2 A
tfi
Current fall time
150
200
ns
VCC = 300 V
IB(off) = 0.2 A
P R O D U C T
I N F O R M A T I O N
2
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