BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
LDX85CFB
LDX85CRB
10
1·0
10
8
TC = 25°C
IB(on) = IC / 5
VBE(off) = -5 V
TC = 25°C
6
4
0·1
tp = 100 µs
2
tp = 1 ms
tp = 10 ms
DC Operation
0·01
0
1·0
10
100
1000
0
100 200 300 400 500 600 700 800
VCE - Collector-Emitter Voltage - V
VCE - Collector-Emitter Voltage - V
Figure 4.
Figure 5.
THERMAL INFORMATION
THERMAL RESPONSE JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
LDX85CZA
1·0
0·1
60%
40%
TA = 25°C
20%
10%
t1
t2
0%
0·01
duty cycle = t1/t2
Read time at end of t1,
æZ
ö
TJ (max) – TA = PD (peak) · ç qJA÷ · RqJA (max)
R
è
qJA ø
102
0·001
10-4
10-3
10-2
10-1
100
101
103
t1 - Power Pulse Duration - s
Figure 6.
P R O D U C T
I N F O R M A T I O N
4
POINN [ POWER INNOVATIONS LTD ]
