BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
ANTI-PARALLEL DIODE
INSTANTANEOUS FORWARD CURRENT
vs
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
INSTANTANEOUS FORWARD VOLTAGE
LDX85CHF
LDX85CVF
30
10
1·0
TC = 25°C
TC = 25°C
10
0·1
VCE
VCE
=
=
1 V
5 V
VCE = 10 V
3·0
0·01
0·01
0·1
1·0
10
0
0·5
1·0
1·5
2·0
2·5
IC - Collector Current - A
VEC - Instantaneous Forward Voltage - V
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
CASE TEMPERATURE
LDX85CVB
1.0
0.9
0.8
0.7
0.6
IC = 1 A
IB = 0.2 A
-50
-25
0
25
50
75
100 125 150
TC - Case Temperature - °C
Figure 3.
P R O D U C T
I N F O R M A T I O N
3
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