Philips Semiconductors
Product specification
LIN transceiver
TJA1020
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are referenced to pin GND.
SYMBOL
V
BAT
V
LIN
V
NWAKE
I
NWAKE
PARAMETER
supply voltage on pin BAT
DC voltage on pin LIN
DC voltage on pin NWAKE
current on pin NWAKE (only relevant if
V
NWAKE
< V
GND
−
0.3 V; current will flow into
pin GND)
DC voltage on pin INH
output current at pin INH
transient voltage on pin LIN (ISO7637)
virtual junction temperature
storage temperature
electrostatic discharge voltage; human body
model
on pins NWAKE, LIN and BAT
on pins RXD, NSLP, TXD and INH
V
esd(MM)
Notes
1. Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ resistor.
2. Equivalent to discharging a 200 pF capacitor through a 10
Ω
resistor and a 0.75
µH
coil. In the event of a discharge
from pin INH to pin BAT:
−150
V < V
esd(MM)
< +150 V.
THERMAL CHARACTERISTICS
According to IEC747-1.
SYMBOL
R
th(j-a)
R
th(j-s)
base
PARAMETER
CONDITION
VALUE
145
tbf
UNIT
K/W
K/W
electrostatic discharge voltage; machine
model; all pins
note 2
note 1
−4
−2
−200
+4
+2
+200
kV
kV
V
CONDITIONS
MIN.
−0.3
−0.3
−27
−1
−15
+7
+40
+40
−
MAX.
+40
UNIT
V
V
V
V
mA
V
TXD
, V
RXD
, V
NSLP
DC voltage on pins TXD, RXD and NSLP
V
INH
I
INH
V
trt(LIN)
T
vj
T
stg
V
esd(HBM)
−0.3
−50
−150
−40
−55
V
BAT
+ 0.3
+15
+100
+150
+150
V
mA
V
°C
°C
thermal resistance from junction to ambient in in free air
SO8 package
thermal resistance from junction to substrate
bare die
in free air
QUALITY SPECIFICATION
Quality specification in accordance with
“AEC - Q100”.
2002 Jul 17
9
PHILIPS [ NXP SEMICONDUCTORS ]
