TDA8931
Philips Semiconductors
Power comparator 1 × 20 W
14.5 Measured performance figures of mono amplifier with TDA8931
Table 13: Characteristics
VP = 22 V; RL = 4 Ω, fi = 1 kHz; inverted input signal; Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
[1]
VP
operating supply
12
22
35
V
voltage
Po
output power
VP = 26 V; RL = 4 Ω
THD+N = 10 %
THD+N = 1 %
-
-
22
20
-
-
W
W
VP = 22 V; RL = 4 Ω
THD+N = 10 %
THD+N = 1 %
-
-
16.0
12.0
-
-
W
W
VP = 30 V; RL = 8 Ω
THD+N = 10 %
THD+N = 1 %
-
-
16.0
12.0
-
-
W
W
THD+N total harmonic
Po = 1 W;
distortion-plus-noise AES17 brick wall filter
Vp = 22 V; RL = 4 Ω
-
-
0.02
0.02
-
-
%
%
Vp = 30 V; RL = 8 Ω
η
efficiency
Po = 15 W
Vp = 22 V; RL = 4 Ω
Vp = 30 V; RL = 8 Ω
-
-
-
89
91
20
-
-
-
%
%
Gv
closed loop gain
Vi = 100 mV (RMS);
fi = 1 kHz
dB
Vn(o)
S/N
B
noise output voltage inputs shorted;
AES17 brick wall filter
-
-
-
128
98
-
-
-
µV
dB
Hz
signal-to-noise ratio unwanted; with respect
to Vo = 10 V (RMS)
band width
−3 dB low; LF cut-off
point depends on value
of SE capacitances
40
−3 dB high
-
45000
48
-
-
Hz
dB
SVRR
supply voltage ripple Vp = 22 V; RL = 4 Ω;
45
rejection
Vripple = 2 V (p-p);
fripple = 100 Hz with feed
forward network (470 kΩ
and 15 nF)
fc
idle carrier frequency
-
290
-
kHz
[1] Operates down to UVP threshold level and operates up to OVP threshold level.
9397 750 13847
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 14 January 2004
21 of 31
NXP [ NXP ]
