Philips Semiconductors
Product specification
Smart card interface
TDA8000; TDA8000T
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Data lines [I/O1, I/O2, I/O1(µC), I/O2(µC)]; note 5
VOH
HIGH level output voltage on I/O
4.5 < VSUP < 5.5;
4.5 < VI/O(µC) < 5.5;
4
−
−
VCC + 0.2
V
I
OH = −20 µA
4.5 < VSUP < 5.5;
4.5 < VI/O(µC) < 5.5;
IOH = −200 µA
2.4
−
V
VOL
IIL
LOW level output voltage on I/O
II/O = 1 mA;
I/O(µC) grounded
−
−
−
4
−
−
−
−
−
−
65
mV
µA
mA
V
LOW level input current on I/O(µC) I/O(µC) grounded;
−500
−5
II/O = 0
I/O(µC) grounded;
I/O connected to VCC
VOH
VOL
IIL
HIGH level output voltage on
I/O(µC)
4.5 < VI/O < 5.5
VSUP + 0.2
70
LOW level output voltage on
I/O(µC)
II/O(µC) = 1 mA;
I/O grounded
mV
LOW level input current on I/O
I/O grounded; II/O(µC) = 0
−
−
−
−
−500
−5
µA
I/O grounded; I/O(µC)
mA
connected to VSUP
VIDLE
ZIDLE
voltage on I/O outside a session
−
−
−
0.4
V
impedance on I/O(µC) outside a
10
−
MΩ
session
Rpu
internal pull-up resistance between
I/O and VCC
17
20
23
1
kΩ
µs
tr, tf
rise and fall times
Ci = Co = 30 pF
−
−
Protections
Tsd
shut-down local temperature
shut-down current at VCC
shut-down current at VPP
shut-down current at I/O
−
135
−
−
°C
ICC(sd)
IPP(sd)
II/O(sd)
−175
−90
3
−230
−140
5
mA
mA
mA
−
from I/O to I/O(µC)
−
Timing
tact
activation sequence duration
deactivation sequence duration
see Fig.6
see Fig.8
see Fig.6
250
250
−
−
−
−
500
500
140
µs
µs
µs
tde
t3
start of the window for sending
CLK to the card
1996 Dec 12
15
NXP [ NXP ]
