Philips Semiconductors
Product specification
Smart card interface
TDA8000; TDA8000T
handbook, halfpage
4
MBE256
handbook, halfpage
3
MBE255
P tot
(W)
3
P tot
(W)
2
2
1
1
0
50
0
50
100
150
Tamb (
o
C)
0
50
0
50
100
150
Tamb (
o
C)
Fig.10 Power derating curve (DIP28).
Fig.11 Power derating curve (SO28).
HANDLING
Each pin withstands the ESD test according to MIL-STD-883C class 3 for card contacts, class 2 for the remaining.
Method 3015 (HBM 1500
Ω,
100 pF) 3 pulses positive and 3 pulses negative; on each pin referenced to ground.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
SOT117-1
SOT136-1
PARAMETER
thermal resistance from junction to ambient in free air
30
70
K/W
K/W
VALUE
UNIT
1996 Dec 12
11
PHILIPS [ NXP SEMICONDUCTORS ]
