Philips Semiconductors
Product specification
Smart card interface
TDA8000; TDA8000T
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Card supply voltage (VCC
)
VCC
output voltage
idle mode
−
−
−
0.4
V
V
active mode;
ICC < 100 mA
4.80
5.20
ICC
SR
output current
slew rate
−
−
−
−100
−400
1.20
mA
V
CC connected to GND
−
mA
up or down
0.80
1.0
5.0
−
V/µs
5 V reference output (CVNC)
VCVNC output voltage at CVNC
Crystal connection (XTAL)
ICVNC < −15 mA
4.5
5.5
V
Rxtal(neg)
negative resistance at crystal
3 MHz < fi < 11 MHz;
note 4
−
−300
Ω
Vxtal
fxtal
DC voltage at crystal
3
3
−
−
4
V
crystal resonant frequency
11
MHz
External clock input (CLKIN)
fext
VIL
VIH
IIL
frequency at CLKIN
note 2
0
−
−
−
−
−
−
8
MHz
V
LOW level input voltage
HIGH level input voltage
LOW level input current
HIGH level input current
input capacitance
0
0.8
5
1.5
−
V
VIL = 0 V
VIH = 2 V
−20
20
5
µA
µA
pF
IIH
−
CI
−
Clock output (CLKOUT)
fCLKOUT frequency on CLKOUT
VOL
1
−
−
−
−
−
−
8
MHz
V
LOW level output voltage
HIGH level output voltage
IOL = 1 mA
−
0.4
−
VOH
VOH = −200 µA
VOH = −10 µA
CL = 30 pF; note 2
3
V
4
−
V
tr, tf
rise and fall times
duty factor
−
25
55
ns
%
δ
CLKDIV = 0;
45
CL = 30 pF; note 2
CLKDIV = 1;
40
−
60
%
CL = 30 pF; note 2
∆δ/∆θ
thermal drift on duty factor
DIP and SO packages
−
−0.1
−
%/C
1996 Dec 12
14
NXP [ NXP ]
