Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYQ28X series
Qs / nC
trr / ns
1000
100
10
IF=5A
IF=2A
IF=1A
100
10
IF=5A
IF=1A
1.0
1
1
0.1
100
10
dIF/dt (A/us)
1.0
10
100
-dIF/dt (A/us)
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
Irrm / A
10
Zth j-hs (K/W)
10
without heatsink compound
with heatsink compound
1
1
IF=5A
0.1
IF=1A
0.1
t
P
p
D
t
0.01
0.01
10us
10
100
1
1ms
0.1s
10s
-dIF/dt (A/us)
tp / s
Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
th j-hs = f(tp).
Z
BYQ28
IF / A
15
Tj=150C
Tj=25C
10
5
max
typ
0
0.5
1.5
0
1
VF / V
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
August 1996
4
Rev 1.000
NXP [ NXP ]
