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BYQ28X-200 参数 Datasheet PDF下载

BYQ28X-200图片预览
型号: BYQ28X-200
PDF下载: 下载PDF文件 查看货源
内容描述: 整流二极管超快 [Rectifier diodes ultrafast]
分类和应用: 整流二极管
文件页数/大小: 6 页 / 50 K
品牌: PHILIPS [ NXP SEMICONDUCTORS ]
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Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
GENERAL DESCRIPTION
Glass passivated dual epitaxial
rectifier diodes in a full pack plastic
envelope, featuring low forward
voltage drop, ultra-fast recovery
times
and
soft
recovery
characteristic. They are intended for
use in switched mode power supplies
and high frequency circuits in general
where low conduction and switching
losses are essential.
BYQ28X series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
O(AV)
t
rr
PARAMETER
BYQ28X-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
MAX.
100
100
0.895
10
25
MAX.
150
150
0.895
10
25
MAX.
200
200
0.895
10
25
UNIT
V
V
A
ns
PINNING - SOT186A
PIN
1
2
3
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
PIN CONFIGURATION
case
SYMBOL
a1
1
k2
1 2 3
a2
3
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
PARAMETER
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
1
Output current (both diodes
conducting)
2
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
I
2
t for fusing
Storage temperature
Operating junction temperature
square wave
δ
= 0.5; T
hs
92 ˚C
sinusoidal
a = 1.57; T
hs
95 ˚C
t = 25
µs; δ
= 0.5;
T
hs
92 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
t = 10 ms
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-40
-
-100
100
100
100
MAX.
-150
150
150
150
10
9
14
10
50
55
12.5
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
A
2
s
˚C
˚C
I
O(RMS)
I
FRM
I
FSM
I
2
t
T
stg
T
j
1
T
hs
148˚C for thermal stability.
2
Neglecting switching and reverse current losses
August 1996
1
Rev 1.000