Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYQ28X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Cisol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
heatsink
waveform;
R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-hs
Thermal resistance junction to with heatsink compound
-
-
-
-
-
55
5.7
6.7
-
K/W
K/W
K/W
heatsink
without heatsink compound
Rth j-a
Thermal resistance junction to in free air
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage (per diode)
IF = 5 A; Tj = 150˚C
IF = 5 A
-
-
-
-
-
0.80 0.895
V
V
0.95
1.10
0.1
2
1.10
1.25
0.2
IF = 10 A
V
IR
Reverse current (per diode)
VR = VRWM; Tj = 100 ˚C
VR = VRWM
mA
µA
10
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Qs
trr1
trr2
Vfr
Reverse recovery charge (per
diode)
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
-
-
-
-
4
15
10
1
9
25
20
-
nC
ns
ns
V
Reverse recovery time (per
diode)
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
Reverse recovery time (per
diode)
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
Forward recovery voltage (per IF = 1 A; dIF/dt = 10 A/µs
diode)
August 1996
2
Rev 1.000
NXP [ NXP ]
