Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYQ28X series
dI
0.5A
IF
I
F
F
dt
t
0A
rr
time
I
= 0.25A
rec
IR
Q
100%
10%
s
trr2
I
I
R
rrm
I = 1A
R
Fig.1. Definition of trr1, Qs and Irrm
Fig.4. Definition of trr2
PF / W
Ths(max) / C
D = 1.0
BYQ28
I
8
7
6
5
4
3
2
1
0
104.4
110.1
115.8
121.5
F
F
Vo = 0.748 V
Rs = 0.0293 Ohms
0.5
time
0.2
0.1
127.2
132.9
138.6
V
t
T
p
tp
I
D =
V
fr
144.3
150
t
T
6
V
F
0
1
2
3
4
5
7
8
IF(AV) / A
time
Fig.2. Definition of Vfr
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
Ths(max) / C
PF / W
BYQ28
R
6
5
4
3
2
1
0
115.8
121.5
127.2
132.9
138.6
Vo = 0.748 V
Rs = 0.0293 Ohms
a = 1.57
1.9
2.2
D.U.T.
2.8
Voltage Pulse Source
4
Current
shunt
to ’scope
144.3
150
0
1
2
3
4
5
6
IF(AV) / A
Fig.3. Circuit schematic for trr2
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV)
.
August 1996
3
Rev 1.000
NXP [ NXP ]
