Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
MLD195
BSS84
handbook, halfpage
1.2
handbook, halfpage
(1)
1.8
MLD194
k
k
(2)
1.0
1.4
0.8
1.0
0.6
−50
0
50
100
Tj (°C)
150
0.6
−50
0
50
100
Tj (°C)
150
V
GSth
at T
j
k
=
-------------------------------------
-
V
GSth
at 25°C
I
D
=
−1
mA; V
DS
= V
GS
.
R
DSon
at T
j
k
=
----------------------------------------
-
R
DSon
at 25
°C
(1) I
D
=
−130
mA; V
GS
=
−10
V.
(2) I
D
=
−20
mA; V
GS
=
−2.4
V.
Fig.10 Temperature coefficient of gate-source
threshold voltage.
Fig.11 Temperature coefficient of drain-source
on-state resistance.
10
3
handbook, full pagewidth
Rth j-a
(K/W)
10
2
δ
=
0.75
0.5
0.2
0.1
0.05
10
0.02
0.01
MLD250
P
1
0
tp
T
10
−1
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
δ
=
tp
T
t
tp (s)
10
3
T
amb
= 25
°C.
Fig.12 Thermal resistance from junction to ambient as a function of pulse time; typical values.
1997 Jun 18
6
PHILIPS [ NXP SEMICONDUCTORS ]
