Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
PARAMETER
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
T
amb
≤
25
°C;
note 1
open drain
CONDITIONS
−
−
−
−
−
−65
−
MIN.
MAX.
−50
±20
−130
−520
250
+150
150
BSS84
UNIT
V
V
mA
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
UNIT
K/W
Note to the Limiting values and Thermal characteristics
1. Device mounted on a printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
V
GSth
I
DSS
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
CONDITIONS
V
GS
= 0; I
D
=
−10 µA
V
DS
= V
GS
; I
D
=
−1
mA
V
GS
= 0; V
DS
=
−40
V
V
GS
= 0; V
DS
=
−50
V
V
GS
= 0; V
DS
=
−50
V; T
j
= 125
°C
I
GSS
R
DSon
y
fs
C
iss
C
oss
C
rss
t
on
t
off
gate leakage current
drain-source on-state resistance
forward transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
V
DS
= 0; V
GS
=
±20
V
V
GS
=
−10
V; I
D
=
−130
mA
V
DS
=
−25
V; I
D
=
−130
mA
V
GS
= 0; V
DS
=
−25
V; f = 1 MHz
V
GS
= 0; V
DS
=
−25
V; f = 1 MHz
V
GS
= 0; V
DS
=
−25
V; f = 1 MHz
V
GS
= 0 to
−10
V; V
DD
=
−40
V;
I
D
=
−200
mA
V
GS
=
−10
to 0 V; V
DD
=
−40
V;
I
D
=
−200
mA
MIN.
−50
−0.8
−
−
−
−
−
50
−
−
−
−
−
TYP.
−
−
−
−
−
−
−
−
25
15
3.5
MAX.
−
−2
−100
−10
−60
±10
10
−
45
25
12
−
−
UNIT
V
V
nA
µA
µA
nA
Ω
mS
pF
pF
pF
Switching times
(see Figs 2 and 3)
turn-on time
turn-off time
3
7
ns
ns
1997 Jun 18
3
PHILIPS [ NXP SEMICONDUCTORS ]
