NXP Semiconductors
BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
5. Limiting values
Table 5.
Symbol
V
DS
V
GS
I
D
I
DM
P
tot
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
V
ESD
[1]
[2]
[3]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
= 25 °C
Min
-
-20
-
-
-
-
-
-
-55
-55
-65
T
amb
= 25 °C
HBM
Max
60
20
320
210
1.2
260
310
830
150
150
150
320
1500
Unit
V
V
mA
mA
A
mW
mW
mW
°C
°C
°C
mA
V
junction temperature
ambient temperature
storage temperature
source current
electrostatic discharge voltage
Source-drain diode
-
-
ESD maximum rating
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Measured between all pins.
120
P
der
(%)
80
001aao121
120
I
der
(%)
80
001aao122
40
40
0
-75
-25
25
75
125
T
j
(°C)
175
0
-75
-25
25
75
125
T
j
(°C)
175
Fig 1.
Normalized total power dissipation as a
function of junction temperature
Fig 2.
Normalized continuous drain current as a
function of junction temperature
BSS138BKW
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 12 August 2011
3 of 16
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