NXP Semiconductors
BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
10
3
duty cycle = 1
Z
th(j-a)
(K/W)
10
2
0.75
0.5
0.33
0.25
0.1
0.2
0.05
017aaa028
10
0
0.02
0.01
1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 4.
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.5
0.25
0.1
0.33
0.2
0.05
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa029
0
10
0.02
0.01
1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 1 cm
2
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BSS138BKW
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 12 August 2011
5 of 16
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