NXP Semiconductors
BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
0.4
I
D
(A)
0.3
10 V
2.5 V
aaa-000158
2V
10
-3
I
D
(A)
10
-4
aaa-000159
0.2
1.75 V
(1)
(2)
(3)
10
-5
0.1
1.5 V
V
GS
= 1.25 V
0
1
2
3
V
DS
(V)
4
0
10
-6
0
0.5
1.0
1.5
V
GS
(V)
2.0
T
j
= 25 °C
T
j
= 25 °C; V
DS
= 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
6
aaa-000160
Fig 7.
Sub-threshold drain current as a function of
gate-source voltage
6
aaa-000161
R
DS(on)
(Ω)
(1)
R
DS(on)
(Ω)
4
(2)
4
(3)
2
(4)
(5)
(6)
2
(1)
(2)
0
0
0.1
0.2
0.3
I
D
(A)
0.4
0
0
2
4
6
8
10
V
GS
(V)
T
j
= 25 °C
(1) V
GS
= 1.5 V
(2) V
GS
= 1.75 V
(3) V
GS
= 2.0 V
(4) V
GS
= 2.25 V
(5) V
GS
= 4.5 V
(6) V
GS
= 10 V
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values
Fig 9.
I
D
= 300 mA
(1) T
j
= 150 °C
(2) T
j
= 25 °C
Drain-source on-state resistance as a function
of gate-source voltage; typical values
BSS138BKW
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 12 August 2011
7 of 16
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