Philips Semiconductors
Preliminary specification
UHF power transistor
BLV2045N
handbook, halfpage
12
MCD881
Gp
60
η
C
(%)
50
handbook, halfpage
12
MCD882
Gp
60
η
C
(%)
50
Gp
(dB)
8
η
C
Gp
(dB)
8
40
40
30
η
C
30
4
20
4
20
10
10
0
0
10
20
30
PL (W)
40
0
0
0
10
20
30
40
PL (PEP) (W)
0
V
CE
= 26 V; I
CQ
= 150 mA; f
1
= 1990 MHz; f
2
= 1990.1 MHz
V
CE
= 26 V; I
CQ
= 150 mA; f = 1990 MHz.
Fig.3
Fig.2
Power gain and collector efficiency as
functions of load power; typical values.
Power gain and collector efficiency as
functions of peak envelope load power;
typical values.
handbook, halfpage
0
MCD883
dim
(dBc)
−20
d3
−40
d5
−60
0
10
20
30
40
PL (PEP) (W)
V
CE
= 26 V; I
CQ
= 150 mA; f
1
= 1990 MHz; f
2
= 1990.1 MHz.
Fig.4
Intermodulation distortion as a function of
peak envelope load power; typical values.
2000 Feb 21
4
PHILIPS [ NXP SEMICONDUCTORS ]
