Philips Semiconductors
Preliminary specification
UHF power transistor
FEATURES
•
Emitter ballasting resistors for optimum temperature
profile
•
Gold metallization ensures excellent reliability
•
Internal input and output matching for an easy design of
wideband circuits.
APPLICATIONS
•
Common emitter class-AB operation in PCN and PCS
applications in the 1800 to 2000 MHz frequency range.
DESCRIPTION
2
BLV2045N
PINNING - SOT390A
PIN
1
2
3
SYMBOL
c
b
e
base
emitter, connected to flange
DESCRIPTION
collector
handbook, halfpage
1
3
NPN silicon planar UHF power transistor in a 2-lead
SOT390A flange package with a ceramic cap. The emitter
is connected to the flange.
Top view
MSA470
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common emitter test circuit.
MODE OF
OPERATION
CW, class-AB
2-tone, class-AB
f
(MHz)
1990
f
1
= 1990.0; f
2
= 1990.1
V
CE
(V)
26
26
P
L
(W)
35
35 (PEP)
G
p
(dB)
typ. 9.5
≥9.5
η
C
(%)
typ. 43
≥33
d
im
(dBc)
−
≤−30
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
operating junction temperature
T
mb
= 25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−65
−
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2000 Feb 21
2
MIN.
MAX.
65
27
3
4
4
125
+150
200
UNIT
V
V
V
A
A
W
°C
°C
PHILIPS [ NXP SEMICONDUCTORS ]
