Philips Semiconductors
Preliminary specification
UHF power transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
PARAMETER
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
CONDITIONS
P
L
= 35 W;
η
C
= 40%; T
mb
= 25
°C
BLV2045N
VALUE
1.4
0.4
UNIT
K/W
K/W
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
Note
1. Capacitance of die only.
APPLICATION INFORMATION
RF performance at T
h
= 25
°C
in a common emitter test circuit.
MODE OF
OPERATION
CW, class-AB
2-tone, class-AB
f
(MHz)
1990
f
1
= 1990.0; f
2
= 1990.1
V
CE
(V)
26
26
I
CQ
(mA)
150
150
P
L
(W)
35
35 (PEP)
G
p
(dB)
typ. 9.5
≥9.5
typ. 10.2
η
C
(%)
typ. 43
≥33
typ. 35
d
im
(dBc)
−
≤−30
typ.
−32
PARAMETER
collector-base breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
CONDITIONS
open emitter; I
C
= 20 mA
open collector; I
E
= 40 mA
V
CE
= 26 V; V
BE
= 0
V
CE
= 10 V; I
C
= 2 A
V
CB
= 26 V; I
E
= i
e
= 0;
f = 1 MHz; note 1
V
CE
= 26 V; I
C
= 0;
f = 1 MHz
MIN.
65
27
3
−
45
−
−
−
−
−
−
−
t.b.f.
t.b.f.
TYP.
MAX.
−
−
−
4
100
−
−
pF
pF
UNIT
V
V
V
mA
collector-emitter breakdown voltage open base; I
C
= 60 mA
Ruggedness in class-AB operation
The BLV2045N is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the
following conditions: f
1
= 1990.0 MHz; f
2
= 1990.1 MHz; V
CE
= 26 V; I
CQ
= 150 mA; P
L
= 35 W (PEP); T
mb
= 25
°C.
2000 Feb 21
3
PHILIPS [ NXP SEMICONDUCTORS ]
