Philips Semiconductors
Preliminary specification
UHF power transistor
BLV2045N
handbook, halfpage
4
MCD886
handbook, halfpage
6
MCD887
Zi
(Ω)
3
ri
ZL
(Ω)
4
ZL
2
xi
2
1
0
XL
0
1800
1850
1900
1950
f (MHz)
2000
−2
1800
1850
1900
1950
f (MHz)
2000
V
CE
= 26 V; I
CQ
= 150 mA; P
L
= 35 W; T
mb
= 25
°C.
V
CE
= 26 V; I
CQ
= 150 mA; P
L
= 35 W; T
mb
= 25
°C.
Fig.7
Input impedance as a function of frequency
(series components); typical values.
Fig.8
Load impedance as a function of frequency
(series components); typical values.
handbook, halfpage
12
MCD888
60
η
C
(%)
50
Gp
(dB)
Gp
η
C
8
40
30
dbook, halfpage
4
20
10
Zi
ZL
MBA451
0
1800
1850
1900
1950
f (MHz)
0
2000
V
CE
= 26 V; I
CQ
= 150 mA; P
L
= 35 W; T
mb
= 25
°C.
Fig.9
Power gain and collector efficiency as
functions of frequency; typical values.
Fig.10 Definition of transistor impedance.
2000 Feb 21
8
PHILIPS [ NXP SEMICONDUCTORS ]
