Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
CHARACTERISTICS
T
j
= 25
°C
(unless otherwise specified).
SYMBOL
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
h
FE
C
re
f
T
G
UM
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-base leakage current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain;
note 1
CONDITIONS
I
C
= 0.1 mA; I
E
= 0
I
C
= 10 mA; I
B
= 0
I
E
= 0.1 mA; I
C
= 0
I
E
= 0; V
CB
= 10 V
I
C
= 70 mA; V
CE
= 8 V
I
B
= I
b
= 0; V
CE
= 12 V;
f = 1 MHz
I
C
= 70 mA; V
CE
= 12 V;
f = 1 GHz
I
C
= 70 mA; V
CE
= 12 V;
f = 900 MHz; T
amb
= 25
°C
I
C
= 70 mA; V
CE
= 12 V;
f = 2 GHz; T
amb
= 25
°C
s
21
V
o
Notes
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero. G
UM
2
BFG591
MIN.
−
−
−
−
60
−
−
−
−
−
−
−
−
−
−
TYP.
MAX.
20
15
3
100
250
−
−
−
−
−
−
UNIT
V
V
V
nA
pF
GHz
dB
dB
dB
mV
90
0.7
7
13
7.5
12
700
insertion power gain
output voltage
I
C
= 70 mA; V
CE
= 12 V;
f = 1 GHz; T
amb
= 25
°C
note 2
2. d
im
= 60 dB (DIN45004B);
V
p
= V
o;
V
q
= V
o
−6
dB; V
r
= V
o
−6
dB;
f
p
= 795.25 MHz; f
q
= 803.25 MHz; f
r
= 803.25 MHz; measured at f
(p+q-r)
= 793.25 MHz.
s
21 2
=
10 log ------------------------------------------------------------ dB.
(
1
–
s
11 2
) (
1
–
s
22 2
)
1995 Sep 04
4
PHILIPS [ NXP SEMICONDUCTORS ]
